turboswitch is a trademark of stmicroelectronics november 1999 - ed: 5a specific to the following operations: snubbing or clamping, demagnetization and rectification ultra-fast and soft recovery very low overall power losses in both the diode and the companion transistor high frequency operation high reverse voltage capability features and benefits turboswitch 1200v drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. due to their optimized switching performances they also highly decrease power losses in any associated switching igbt or mosfet in all freewheel mode operations. they are particularly suitable in motor control circuitries, or in primary of smps as snubber, clamping or demagnetizing diodes. they are also suitable for the secondary of smps as high voltage rectifier diodes. description i f(av) 1a v rrm 1200v t rr (typ) 65ns v f (max) 1.5v main product characteristics symbol parameter value unit v rrm repetitive peak reverse voltage 1200 v i f(rms) rms forward current 6 a i frm repetitive peak forward current tp = 5 m s f = 5khz square 10 a i fsm surge non repetitive forward current tp = 10ms sinusoidal 20 a t stg storage temperature range - 65 to + 150 c t j maximum operating junction temperature 125 c absolute ratings (limiting values) STTA112U ? turboswitch ? ultra-fast high voltage diode smb 1/8
symbol parameter test conditions min typ max unit v f * forward voltage drop i f = 1a tj = 25c tj = 125c 1.1 1.65 1.5 v i r ** reverse leakage current v r = 0.8 x v rrm tj = 25c tj = 125c 90 10 300 m a v to threshold voltage ip < 3.i f(av) tj = 125c 1.15 v rd dynamic resistance 350 m w test pulses : * tp = 380 m s, d < 2% ** tp = 5 ms , d < 2% static electrical characteristics symbol parameter test conditions value unit r th(j-i) junction to lead thermal resistance 23 c/w p 1 conduction power dissipation i f(av) = 0.8a d = 0.5 tlead= 93c 1.4 w p max total power dissipation pmax = p1 + p3 (p3 = 10% p1) tlead= 90c 1.5 w thermal and power data symbol parameter test conditions min typ max unit t rr reverse recovery time tj = 25c i f = 0.5 a i r = 1a irr = 0.25a i f = 1 a di f /dt =-50a/ m s v r = 30v 65 115 ns i rm maximum recovery current tj = 125c v r = 600v i f = 1a di f /dt = -8 a/ m s di f /dt = -50 a/ m s5 1.8 a s factor softness factor tj = 125c v r = 600v i f =1a di f /dt = -50 a/ m s0.7 - dynamic electrical characteristics turn-off switching symbol parameter test conditions min typ max unit t fr forward recovery time tj = 25c i f = 1 a, di f /dt = 8 a/ m s measured at 1.1 v f max 900 ns v fp peak forward voltage 35 v turn-on switching to evaluate the maximum conduction losses use the following equation : p = v to x i f(av) + rd x i f 2 (rms) STTA112U 2/8
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 p1(w) i f(av) (a) d = 1 d = 0.5 d = 0.2 d = 0.1 fig. 1: conduction losses versus average current. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 1.0 10.0 50.0 vfm(v) ifm(a) tj=125c fig. 2: forward voltage drop versus forward cur- rent (maximum values). fig. 3: relative variation of thermal transient im- pedance junction to lead versus pulse duration. 0 20 40 60 80 100 120 140 160 180 200 0.0 2.5 5.0 7.5 10.0 12.5 15.0 i rm (a) v r =600v tj=125c i f =2*i f(av) d if /dt(a/s) fig. 4: peak reverse recovery current versus di f /dt (90% confidence). 0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 trr(ns) i f =2*i f(av) v r =600v tj=125c d if /dt(a/s) fig. 5: reverse recovery time versus di f /dt (90% confidence). 0 20 40 60 80 100 120 140 160 180 200 0.40 0.60 0.80 1.00 s factor i f <2*i f(av) v r =600v tj=125c d if /dt(a/s) fig. 6: softness factor (tb/ta) versus di f /dt (typical values). STTA112U 3/8
i rm 25 50 75 100 125 0.7 0.8 0.9 1.0 1.1 tj(c) s factor fig. 7: relative variation of dynamic parameters versus junction temperature (reference tj=125c). 0 20406080100 0 10 20 30 40 50 60 70 80 v fp (v) i f =2*i f(av) tj=125c d if /dt(a/s) fig. 8: transient peak forward voltage versus di f /dt (90% confidence). v fr =1.1*v f max. 0 20406080100 200 300 400 500 600 700 800 tfr(ns) i f =2*i f(av) tj=125c d if /dt(a/s) fig. 9: forward recovery time versus di f /dt (90% confidence). STTA112U 4/8
total losses due to the diode p = p1+ p2+ p3+ p4+ p5 watts switching losses in the diode conduction losses in the diode reverse losses in the diode the 1200v turboswitch tm series has been designed to provide the lowest overall power losses in all frequency or high pulsed current operations. in such application (fig. a to d), the way of calculating the power losses is given below : application data switching losses in the diode due to the diode fig. a : "freewheel mode" . diode: turboswitch il load transistor switching tp t f=1/t d = tp/t v r STTA112U 5/8
i i f rd i r v r v to v f v fig. e : static characteristics. conduction losses : p1 = v to x i f(av) + r d x i f 2 (rms) reverse losses : p2 = v r x i r x (1 - d ) tp t f=1/t d = tp/t pwm fig. b : snubber diode. fig. c : demagnetizing diode. fig. d : rectifier diode. application data (contd) STTA112U 6/8
i f v f v fp 1.1v f v f f di /dt 0 0t t i fmax tfr fig. g : turn-on characteristics. turn-on losses : p4 = 0.4 (v fp - v f ) x i fmax x t fr x f turn-on losses : (in the transistor, due to the diode) p5 = v r i rm 2 ( 3 + 2 s ) f 6 x di f dt + v r i rm i l ( s + 2 ) f 2 d if dt turn-off losses : p3 = v r i rm 2 s f 6 x di f dt turn-off losses : with non negligible serial inductance p3 = v r i rm 2 s f 6 x di f dt + l i rm 2 f 2 p3, p3 and p5 are suitable for power mosfet and igbt fig. f : turn-off characteristics. di f /dt = v r /l di /dt r tb ta i rm v r i v t s=tb/ta trr = ta + tb rectifier operation v i il t transistor di /dt f di /dt r tb ta i rm vr diode i v t trr = ta + tb s = tb / ta application data (contd) STTA112U 7/8
package mechanical data smb e c l e1 d a1 a2 b ref. dimensions millimeters inches min. max. min. max. a1 1.90 2.45 0.075 0.096 a2 0.05 0.20 0.002 0.008 b 1.95 2.20 0.077 0.087 c 0.15 0.41 0.006 0.016 e 5.10 5.60 0.201 0.220 e1 4.05 4.60 0.159 0.181 d 3.30 3.95 0.130 0.156 l 0.75 1.60 0.030 0.063 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1999 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com footprint dimensions (in millimeters) ordering type marking package weight base qty delivery mode STTA112U t03 smb 0.107g 2500 tape & reel epoxy meets ul94,v0 band indicates cathode 1.52 2.75 2.3 1.52 STTA112U 8/8
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